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| Datasheet File OCR Text: |
| HS-2700RH Data Sheet August 1999 File Number 3624.2 Low Power, High Performance Radiation Hardened Operational Amplifier HS-2700RH is radiation hardened internally compensated operational amplifiers which employ dielectric isolation to achieve excellent DC and dynamic performance with very low quiescent power consumption. DC performance of the amplifier input is characterized by high CMRR (106dB), low offset voltage (0.5mV), along with low bias and offset current (5.0nA and 2.5nA respectively). These input specifications, in conjunction with offset null capability and open-loop gain of 300,000V/V, enable HS-2700RH to provide accurate, high-gain signal amplification. Gain bandwidth 1MHz and slew rate of 20V/s allow for processing of fast, wideband signals. Input and output signal amplitudes of at least 11V can be accommodated while providing output drive capability of 10mA. For maximum reliability, the output is protected in the event of short circuits to ground. The amplifier operates from a wide range of supplies (5.5V to 20V) with a maximum quiescent supply drain of only 150A. HS-2700RH is therefore, ideally suited to low-power instrumentation and filtering applications that require fast, accurate response over a wide range of signal frequency. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95670. A "hot-link" is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp Features * Electrically Screened to SMD # 5962-95670 * QML Qualified per MIL-PRF-38535 Requirements * Low Power Supply Current . . . . . . . . . . . . . . 150A (Max) 90A (Typ) * High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . . 86dB (Min) 106dB (Typ) * Low Input Bias Current . . . . . . . . . . . . . . . . . . . 20nA (Min) 5nA (Typ) * Low Offset Current . . . . . . . . . . . . . . . . . . . . . . 10nA (Min) 2.5nA (Typ) * Total Dose . . . . . . . . . . . . . . . . . . . . . . . . 1 x 104 RAD(Si) Applications * High Gain Amplifier * Instrumentation Amplifiers * Active Filters * Telemetry Systems * Battery-Powered Equipment Ordering Information ORDERING NUMBER 5962D9567002VCA 5962D9567002VCC 5962D9567002VGA INTERNAL MKT. NUMBER HS1-2700RH-Q HS1B-2700RH-Q HS2-2700RH-Q TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 Pinouts HS1-2700RH (CERDIP) GDIP1-T14 OR HS1B-2700RH (SBDIP) CDIP2-T14 TOP VIEW NC 1 BAL 2 GUARD 3 14 NC 13 NC 12 BAL BAL 1 HS2-2700RH (CAN) MACY1-X8 TOP VIEW BAL 8 7 V+ IN- 4 IN+ 5 GUARD 6 + 11 V+ 10 OUTPUT 9 NC 8 NC IN- 2 + 3 4 V5 6 OUT IN+ NC V- 7 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 HS-2700RH Test Circuit ACOUT 400 0.1 10K 1 OPEN 2 S3A S1 OPEN 2 S2 OPEN 2 10K 100 100 2 S3B VAC 0.1 1 -VEE 2 1 1 1 2 S5A 1 S6 1.6K 1 +VCC 75pF (NOTE) -1/10 V1 FOR LOOP STABILITY, USE MIN VALUE CAPACITOR TO PREVENT OSCILLATION DUT + OPEN 1 50K 2 S5B 1 S8 2 2K S9 1 2 V2 x2 EOUT ALL RESISTORS = 1% () ALL CAPACITORS = 10% (F) BUFFER 500K OPEN + - -1 + - 1 OPEN 50K NOTE: Includes stray capacitances. Timing Waveforms VIN + VOUT - 1.6K 400 75pF FIGURE 1. SIMPLIFIED TEST CIRCUIT +1.0V INPUT INPUT +40mV 0V -1.0V +4V +2.5V OUTPUT -2.5V -4V T SLEW RATE = V/T V 0V OVERSHOOT +160mV 90% OUTPUT 10% 0V RISE TIME -40mV FIGURE 2. SLEW RATE WAVEFORM FIGURE 3. TRANSIENT RESPONSE WAVEFORM NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized. 2 HS-2700RH Typical Performance Curves 5 4 3 CURRENT (mA) 2 VOLTAGE (mV) 1 0 -1 -2 -3 -4 -5 -55 -25 0 25 50 75 100 125 -20 -55 -25 0 25 50 75 100 125 20 BIAS CURRENT TA = 25oC, VSUPPLY = 15V, Unless Otherwise Specified 30 10 0 OFFSET CURRENT -10 TEMPERATURE (oC) TEMPERATURE (oC) FIGURE 4. OFFSET VOLTAGE AS A FUNCTION OF TEMPERATURE FIGURE 5. INPUT BIAS CURRENT AND OFFSET CURRENT AS A FUNCTION OF TEMPERATURE 500 400 300 BIAS CURRENT (nA) 200 100 0 -100 -200 -300 -400 -500 -20 -15 -10 -5 0 5 10 15 20 VS = 15.0V TA = 25oC BIAS CURRENT (A) 10 9 8 7 6 5 4 3 2 1 0 COMMON MODE VOLTAGE (V) 0 5 10 15 20 25 VS = 15.0V TA = 25oC DIFFERENTIAL INPUT VOLTAGE (V) FIGURE 6. BIAS CURRENT AS A FUNCTION OF COMMON MODE VOLTAGE FIGURE 7. BIAS CURRENT AS A FUNCTION OF DIFFERENTIAL INPUT VOLTAGE 1000 POWER SUPPLY CURRENT (A) 900 800 700 600 500 400 300 200 100 0 0 100 200 300 VS = 15.0V POWER SUPPLY CURRENT (A) TA = 25oC 150 VS = 20.0V 120 VS = 15.0V VS = 10.0V 90 VS = 5.5V 60 30 400 500 0 -55 -25 0 25 50 75 100 125 DIFFERENTIAL INPUT VOLTAGE (mV) TEMPERATURE (oC) FIGURE 8. POWER SUPPLY CURRENT AS A FUNCTION OF DIFFERENTIAL INPUT VOLTAGE FIGURE 9. POWER SUPPLY CURRENT AS A FUNCTION OF TEMPERATURE 3 HS-2700RH Typical Performance Curves TA = 25oC, VSUPPLY = 15V, Unless Otherwise Specified (Continued) 130 120 GAIN (dB) 110 100 VS = 20.0V 90 VS = 15.0V VS = 10.0V VS = 5.5V 80 -55 -25 0 25 50 75 100 125 TEMPERATURE (oC) FIGURE 10. VOLTAGE GAIN AS A FUNCTION OF TEMPERATURE NOTE: Open loop (comparator) applications are not recommended, because of the above characteristic. Burn-In Circuits HS1-2700RH CERDIP HS2-2700RH METAL CAN V+ C2 NC NC NC 1 2 3 4 5 NC VC1 D1 R1 C3 V6 7 14 13 12 11 10 9 8 NC NC D2 NC NC NC V+ C2 3 R1 2 7 4 D1 + 6 8 D2 C1 NOTES: 1. R1 = 1M, 5%, 1/4W (Min) 2. C1 = C2 = 0.01F/Socket (Min) or 0.1F/Row (Min) 3. D1 = D2 = 1N4002 or equivalent (per board) 4. |(V+) - (V-)| = 31V 1V NOTES: 5. R1 = 1M, 5%, 1/4W (Min) 6. C1 = 0.01F/Socket (Min) 7. C2 = C3 = 0.01F/Socket (Min) or 0.1F/Row (Min) 8. D1 = D2 = 1N4002 or equivalent (per board) 9. |(V+) - (V-)| = 31V 1V 10. Insulated scope probe must be used during board check-out. 4 HS-2700RH Irradiation Circuit NC NC NC 1 2 3 4 5 NC V2 R1 GND 6 7 14 13 12 11 10 9 8 NC NC NC NC NC V1 NOTES: 11. R = 1M, 5%, 1/4W 12. V1 = +15V + 1.0V 13. V2 = -15V + 1.0V Schematic Diagram OSV1 15 OS+ 430K V+ IN+ 2 IN3 6 OUT 15 V+ 4 NOTE: Nominal currents shown in microamperes. 5 HS-2700RH Die Characteristics DIE DIMENSIONS: 70 mils x 60 mils x 20 mils (1780m x 1530m x 1530m) INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 7kA 0.7kA Top Metallization: Type: Aluminum Thickness: 16kA 2kA Substrate: Linear Bipolar, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: < 2 x 105 A/cm2 Metallization Mask Layout HS-2700RH +IN -IN V- BAL BAL V+ OUTPUT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 6 |
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